TPT5609 transistor (npn) features power dissipation p cm: 1 w (tamb=25 ) collector current i cm: 1 a collector-base voltage v (br)cbo : 25 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 10 a, i e =0 25 v collector-emitter breakdown voltage v (br)ceo ic= 1 ma, i b =0 20 v emitter-base breakdown voltage v (br)ebo i e = 10 a, i c =0 5 v collector cut-off current i cbo v cb = 20 v, i e =0 1 a emitter cut-off current i ebo v eb = 5 v, i c =0 1 a dc current gain h fe v ce = 2 v, i c = 500 ma 60 240 collector-emitter saturation voltage v ce(sat) i c = 800 ma, i b = 80 ma 0.5 v base-emitter voltage v be v ce = 2 v, i c = 500 ma 1 v transition frequency f t v ce = 2 v, i c = 500 ma 190 mhz collector output capacitance c ob v cb = 10 v, i e =0, f= 1 mhz 22 pf classification of h fe rank a b c range 60-120 85-170 120-240 1 2 3 to-92l 1. emitter 2. collector 3. base TPT5609 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
|
